Prices IXDN55N120D1 Ixys Corporation France

BRAND	Ixys Corporation
Product	IXDN55N120D1
Description	single transistor
Internal code	FBR4448677
Technical specification	Continuous collector current max. = 100 A collector emitter- = 1200 V gate-source voltage max. = ±20V Power dissipation max. = 450 W Case Sise=SOT-227B Mounting type = SMD Channel type = N number of pins = 4 switching speed = 1MHz Transistor configuration = easy Dimensions = 38.2 x 25.07 x 9.6mm Max. operating temperature = +150°C

Ixys Corporation - IXDN55N120D1 referenced single transistor product produced by high technology.
IXDN55N120D1 became irreplaceable of foundations. IXDN55N120D1 referenced product which is satisfy the customer's needs, offers advantages of quality and cost. It produced result of tests of laborotory for years. IXDN55N120D1 referenced product is an original piece of your foundation or machine, original parts makes your machine live longer.

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